Use of 1,1‐Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films
Use of 1,1‐Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films
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1,1-二甲基肼在过渡金属氮化物薄膜原子层沉积中的应用
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
M. Leskelä
中科院分区：
文献类型：
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作者：
Marika Juppo;M. Ritala;M. Leskelä
研究了从相应的金属氯化物和1，1-二甲基肼（DMHy）中原子层沉积（ALD）TiN、TaN x、NbN和MoN x薄膜的方法。一般而言，在400°C下沉积的薄膜比在相同温度下以NH3为氮源沉积的薄膜具有更好的特性。此外，薄膜可以在低至200°C的较低温度下沉积。尽管膜中的碳含量相当高，在10原子%的范围内，但结果鼓励进一步的研究。特别是碳对阻隔性能的影响和其他可能较少碳污染的肼衍生物的使用应进行研究。
Atomic layer deposition (ALD) of TiN, TaN x , NbN, and MoN x thin films from the corresponding metal chlorides and 1,1-dimethylhydrazine (DMHy) was studied. Generally, the films deposited at 400°C exhibited better characteristics compared to the films deposited at the same temperature using NH 3 as the nitrogen source. In addition, films could be deposited at lower temperatures down to 200°C. Even though the carbon content in the films was quite high, in the range of 10 atom %, the results encourage further studies. Especially the effect of carbon on the barrier properties and the use of other possibly less carbon-contaminating hydrazine derivatives should be studied.