Toward Ferroelectric Control of Monolayer MoS2
Toward Ferroelectric Control of Monolayer MoS2
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DOI：
10.1021/acs.nanolett.5b00687
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发表时间：
2015-05-01
期刊：
影响因子：
10.8
通讯作者：
Dowben, Peter A.
中科院分区：
文献类型：
--
作者：
Nguyen, Ariana;Sharma, Pankaj;Dowben, Peter A.
在周期性极化的铌酸锂上化学气相沉积（CVD）二硫化钼（MoS2）单层薄膜是可能的，同时保持衬底的极化图案。 MoS2 生长表现出对相对于表面“向上”极化的铁电域的偏好，因此 MoS2 膜可以通过基底铁电极化图案进行模板化，而不需要进一步的光刻。 MoS2 单层保留了“上”域的表面极化，同时稍微淬灭了“下”域的表面极化，如压电响应力显微镜所显示的那样。电传输测量表明，在施加外部电压的情况下，CVD MoS2 的主要载流子发生变化，具体取决于铁电基板的磁畴方向。这种对铁电衬底极化的敏感性为在无需剥离和转移的情况下制造的可扩展器件中过渡金属二硫族化物的铁电非易失性门控提供了可能性。
The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface So that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the "up" domains, while slightly,quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on he domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility, for ferroelectric nonvolatile gating of transition Metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.