EFFECTS OF ELECTRON-IRRADIATION OF RUTILE
EFFECTS OF ELECTRON-IRRADIATION OF RUTILE
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DOI：
10.1080/10420159508220015
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发表时间：
1995-01-01
影响因子：
1
通讯作者：
BUCK, EC
中科院分区：
文献类型：
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作者：
BUCK, EC
分析了0.4-1 MeV电子在不同温度下辐照金红石后产生的位错环。在400℃-500℃的电子辐照期间形成的环是类型为<；100>；{100}的纯边缘间隙，并且没有断层。金红石样品在高温照射数天后，有证据表明在{121}上形成了R=1/2<；011>；的晶体剪切面。用高压显微镜测量了钛在二氧化钛中不同晶向的位移能E(D)。结果表明：E(D)<；100>；类似于52 eV，E(D)<；111>；类似于50 eV，E(D)<；001>；类似于47 eV，表明E(D)仅轻微地依赖于晶体中原子的碰撞方向。发现阈值位移电压具有明显的温度依赖性，且位移能(E(D))随温度升高而减小。
The dislocation loops in rutile produced after irradiation by 0.4-1 MeV electrons al various temperatures have been analyzed. Loops formed during electron irradiation at 400 degrees-500 degrees C were pure edge interstitial of the type < 100 >{100} and were unfaulted. After leaving rutile specimens irradiated at high temperature for a number of days, there was evidence for the formation of crystallographic shear planes (CSP) on {121} with R = 1/2 < 011 >. The displacement energies (E(d)) of Ti in TiO2 for various crystallographic directions have been obtained using the high voltage microscopes. The following results have been found: E(d) < 100 > similar to 52 eV, E(d) < 111 > similar to 50 eV and E(d) < 001 > similar to 47 eV showing that E(d) is only slightly dependent upon the direction of knock-on of atoms in the crystal. An apparent temperature dependence of the threshold displacement voltage was found, where the displacement energy (E(d)) decrease with increasing temperature.