High Efficiency Amorphous Silicon Solar Cells with “Delta-Doped” P-Layer
High Efficiency Amorphous Silicon Solar Cells with “Delta-Doped” P-Layer
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具有“Delta 掺杂”P 层的高效非晶硅太阳能电池
DOI：
10.1109/pvsc.1988.105712
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发表时间：
1989
影响因子：
1.5
通讯作者：
Kiyoshi Takahashi
中科院分区：
文献类型：
--
作者：
Yoshiyuki Kazama;Kazuhisa Seki;Woo;S. Yamanaka;M. Konagai;Kiyoshi Takahashi
新型a-Sip-i-n太阳电池具有“增量掺杂(δ掺杂)”的p层，提高了p层的空穴浓度。利用δ掺杂的p层获得了高达1×10-4scm-1(am1,100mWcm-2)的光电导。横截面电子显微镜观察证实了δ依赖的硼层的存在。δ掺杂p层的玻璃/TCO/p-i-n/Al太阳电池的转换效率为11.5%。掺δ的p层太阳电池的光伏特性表现出0.9V以上的高开路电压，高于常规a-SiCp层太阳电池。我们进一步研究了δ掺杂p层太阳电池的稳定性。
Novel a-Si p-i-n solar cells with “delta-doped (δ-doped)” p-layers were shown to enhance the hole concentration of the p-layers. A high photoconductivity of 1 ×10-4 Scm-1 (AM1, 100 mWcm-2) was obtained using a δ-doped p-layer. The existence of δ-deped boron layers was confirmed by cross-sectional TEM (transmission electron microscope) observations. A conversion efficiency of 11.5% was obtained for glass/TCO/p-i-n/Al solar cells with δ-doped p-layers. The photovoltaic characteristics of δ-doped p-layer solar cells exhibited a high open-circuit voltage of over 0.9 V, which is higher than that of solar cells with a conventional a-SiC p-layer. We furthermore investigated the stability of solar cells with δ-doped p-layers.