High-Contrast Plasmonic-Enhanced Shallow Spin Defects in Hexagonal Boron Nitride for Quantum Sensing
High-Contrast Plasmonic-Enhanced Shallow Spin Defects in Hexagonal Boron Nitride for Quantum Sensing
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DOI：
10.1021/acs.nanolett.1c02495
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发表时间：
2021-09-02
期刊：
影响因子：
10.8
通讯作者：
Li, Tongcang
中科院分区：
文献类型：
--
作者：
Gao, Xingyu;Jiang, Boyang;Li, Tongcang
六方氮化硼（hBN）是一种新型的层状货车德瓦耳斯材料，其自旋缺陷在量子传感领域具有巨大的应用潜力。然而，迄今为止，hBN自旋缺陷的光致发光和光学检测磁共振（ODMR）的对比度相对较低，这限制了它们的灵敏度。在这里，我们报告了一个创纪录的高ODMR的对比度为46%，在室温下和同时增强的hBN自旋缺陷的光致发光高达17倍的表面等离子体的金膜微波波导。我们的研究结果是通过低能He+离子注入和光刻法制备的金膜微波波导在hBN纳米片中产生的浅硼空位自旋缺陷得到的。我们还探讨了微波和激光功率对ODMR的影响，并提高了hBN自旋缺陷的磁场检测灵敏度。我们的研究结果支持了hBN自旋缺陷在纳米量子传感方面的潜力。
The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46% at room temperature and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He+ ion implantation and a gold film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.