Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition
Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition
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DOI：
10.1103/physrevb.82.085318
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发表时间：
2010-08-16
影响因子：
3.7
通讯作者：
Kawarada, Hiroshi
中科院分区：
文献类型：
--
作者：
Kawano, Akihiro;Ishiwata, Hitoshi;Kawarada, Hiroshi
硼掺杂金刚石中超导体到绝缘体转变的临界浓度由两种方式确定，即硼的实际掺杂浓度和霍尔载流子浓度。由于费米面的畸变，(111)和(001)薄膜中的霍尔载流子浓度超过了实际掺杂浓度。 (110)薄膜中高临界硼浓度是由于高浓度间隙硼原子的影响。为了在金刚石中产生超导性，取代位点的硼浓度需要达到 3 X 10(20) cm(-3)。
The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3 X 10(20) cm(-3) in substitutional site is required for inducing superconductivity in diamond.