Alpha-irradiation effects in SiO2
Alpha-irradiation effects in SiO2
复制标题
SiO2 中的α辐射效应
DOI：
10.1127/0935-1221/2008/0020-1842
复制
发表时间：
2008
影响因子：
2.1
通讯作者：
R. Wirth
中科院分区：
文献类型：
--
作者：
R. Krickl;L. Nasdala;J. Götze;D. Grambole;R. Wirth
用不同剂量的 8.8 MeV He 2+ 离子辐照天然和合成结晶 α-石英以及合成 SiO 2 玻璃。使用拉曼光谱和阴极发光 (CL) 光谱、光学显微镜、透射电子显微镜 (TEM) 以及 CL 和电子显微镜成像来表征辐照引起的变化。发现两个 α-石英样品最初的暗蓝紫色 CL 颜色在照射区域转变为亮黄色。在表面以下 45 μm 处观察到发射最大值，这与相关的氦轨迹长度和缺陷密度分布很好地对应。 CL发射的总强度和径向强度分布均随照射剂量而变化。观察结果表明，根据 α 剂量，CL 强度呈非线性、近似对数增加。仅在氦轨迹远端附近观察到拉曼带的显着展宽。这种加宽不仅是由结构辐射损伤引起的，也是由强损伤区域和弱损伤区域之间的应变引起的。
Natural and synthetic crystalline α-quartz, as well as synthetic SiO 2 glass, were irradiated with different doses of 8.8 MeV He 2+ ions. The irradiation-induced alteration was characterised using Raman and cathodoluminescence (CL) spectroscopy, optical microscopy, transmission electron microscopy (TEM) and CL and electron microscope imaging. The initially dull bluish-violet CL colour of the two α-quartz samples was found to be transformed to bright yellow in the irradiated areas. The emission maximum was observed 45 μ m below the surface, which corresponds well with correlated helium trajectory lengths and defect density distribution. Both, total intensity and radial intensity distribution of the CL emission change with the irradiation dose. Observations suggest a nonlinear, approximately logarithmic increase of the CL intensity depending on the alpha dose. Significant broadening of Raman bands is only observed near the far end of helium trajectories. This broadening is not only caused by the structural radiation damage but also by strain between strongly and lowly damaged areas.