Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states
Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states
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DOI：
10.1016/j.apsusc.2015.04.129
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发表时间：
2015-08-30
影响因子：
6.7
通讯作者：
Solis, J. D.
中科院分区：
文献类型：
--
作者：
Ramirez-Porras, A.;Garcia, O.;Solis, J. D.
用电化学腐蚀法制备了硅纳米晶体。所得样品在紫外光照射下，在可见光谱的红色波段显示光致发光。光致发光光谱可以根据随机量子限制模型去卷积成三个分量：一个带来自纳米晶点或量子点，一个来自纳米晶线或量子线，以及一个来自与氧化硅相关的局部表面态的存在。结果与其他已发表的模型吻合良好。(C)2015 Elsevier B.V.版权所有。
Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models. (C) 2015 Elsevier B.V. All rights reserved.