Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si
Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si
复制标题
氮掺杂对硅空位聚集过程影响的理论研究
DOI：
10.1063/1.126760
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发表时间：
2000
影响因子：
4
通讯作者：
K. Wada
中科院分区：
文献类型：
--
作者：
H. Kageshima;A. Taguchi;K. Wada
通过第一性原理计算比较各种氮原子与Si空位配合物的总能量，研究了氮掺杂对Si空位聚集的影响。发现两个氮原子与两个硅空位形成稳定的复合物，强烈表明可以抑制生长冷却中“孤立”硅空位的过饱和。在氮掺杂直拉硅中观察到的延迟空穴形成确实支持了这一建议。
The nitrogen-doping effect on vacancy aggregation in Si is studied by comparing total energies of various complexes of nitrogen atoms and Si vacancies in terms of first-principles calculations. Two nitrogen atoms are found to form a stable complex with two Si vacancies, strongly suggesting that a supersaturation of “isolated” Si vacancies in growth cooling can be suppressed. The delayed void formation observed in N-doped Czochralski Si indeed supports this suggestion.