An epitaxial perovskite as a compact neuristor: electrical self-oscillations in TbMnO3 thin films
An epitaxial perovskite as a compact neuristor: electrical self-oscillations in TbMnO3 thin films
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DOI：
10.1088/1361-6463/ac71e2
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发表时间：
2022-08-18
影响因子：
3.4
通讯作者：
Noheda, B.
中科院分区：
文献类型：
--
作者：
Salverda, M.;Hamming-Green, R. P.;Noheda, B.
开发可以导致人工神经元（神经轴突）和突触（忆阻器）的紧凑版本的材料是新生神经形态材料研究领域的主要愿望。振荡回路作为神经元是有趣的，因为它们模仿动作电位的放电。在这里，我们提出了室温自振荡器件的半导体TbMnO 3的外延薄膜制作。我们发现，在这些设备中观察到的负微分电阻制度，起源于跨越半导体的电子带隙的过渡。控制振荡的机制的固有性质产生了高度的控制和可重复性。在外延钙钛矿氧化物中获得这样的性质开辟了将自振荡性质与其他压电、铁电或磁性钙钛矿氧化物的自振荡性质相结合的道路，以便在紧凑的异质结构中实现混合神经电阻器-忆阻器功能。
Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent neuromorphic materials research field. Oscillating circuits are interesting as neuristors, as they emulate the firing of action potentials. Here we present room-temperature self-oscillating devices fabricated from epitaxial thin films of semiconducting TbMnO3. We show that the negative differential resistance regime observed in these devices, orginates from transitions across the electronic band gap of the semiconductor. The intrinsic nature of the mechanism governing the oscillations gives rise to a high degree of control and repeatability. Obtaining such properties in an epitaxial perovskite oxide opens the way towards combining self-oscillating properties with those of other piezoelectric, ferroelectric, or magnetic perovskite oxides in order to achieve hybrid neuristor-memristor functionality in compact heterostructures.