Preparation and characterization of CuGaS2 thin films as a promising parent material for intermediate band solar cells
Preparation and characterization of CuGaS2 thin films as a promising parent material for intermediate band solar cells
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CuGaS2 薄膜作为中波段太阳能电池有前景的母材的制备和表征
DOI：
10.1016/j.mssp.2014.10.007
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发表时间：
2015-02
影响因子：
4.1
通讯作者：
Jing Wei
中科院分区：
文献类型：
--
作者：
Wang Ligang;Yuan Xiaojun;Wang Yanlai;Yao Wei;Zhu Jun;Jing Wei
采用磁控溅射法制备了铜镓(CG)前驱体，在硫磺气氛中硫化制备了CuGaS2、CGS薄膜。利用X射线衍射仪、能谱仪、扫描电子显微镜和紫外可见光谱仪对CGS薄膜的结构、化学成分和光学性能进行了分析。结果表明，CuGaS2薄膜在450℃时形成了单相结构，且随着温度的升高，该相的结晶度提高。薄膜的成分主要为CuGaS2黄铜矿相(I2d)。在硫化温度为600℃时，晶体的晶格参数为a=b=5.3544°，c=10.4707°。
Copper gallium disulfide (CuGaS2, CGS) thin films were successfully prepared by sulfurizing Cu–Ga (CG) precursors in sulfur atmosphere which have been obtained through magnetron sputtering. Structural, chemical composition and optical properties of CGS films were analyzed by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy and UV–vis spectrophotometer. The results indicated that the CuGaS2films with a single-phase structure had formed at 450 °C and the crystallinity of this phase was improved with the increase in temperature. The composition of the films contains mainly CuGaS2chalcopyrite phase (I2d). And the crystal lattice parameters werea=b=5.3544 Å andc=10.4707 Å at a sulfurization temperature of 600 °C. The UV–vis spectroscopy indicated that the values of band gaps varied in the range of 2.31–2.46 eV within the temperature increasing from 450 to 600 °C.
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具有宽光谱太阳响应的锡掺杂黄铜矿中中间波段的观测
影响因子：
4.6
作者：
Yang, Chongyin;Qin, Mingsheng;Wang, Yaoming;Wan, Dongyun;Huang, Fuqiang;Lin, Jianhua
通讯作者：
Lin, Jianhua
影响因子：
6.7
作者：
Jackson, Philip;Hariskos, Dimitrios;Powalla, Michael
通讯作者：
Powalla, Michael
影响因子：
4.4
作者：
ABRAHAMS, SC;BERNSTEI.JL
通讯作者：
BERNSTEI.JL
影响因子：
3.2
作者：
Marti, Antonio;Marron, David Fuertes;Luque, Antonio
通讯作者：
Luque, Antonio
DOI：
10.1088/0953-8984/25/8/082204
发表时间：
2013-02
期刊：
Journal of Physics: Condensed Matter
影响因子：
--
作者：
A. Salak;A. L. Zhaludkevich;B. Korzun;A. Lisenkov;M. Zheludkevich
通讯作者：
A. Salak;A. L. Zhaludkevich;B. Korzun;A. Lisenkov;M. Zheludkevich