Growth mechanism of Al2O3 film on an organic layer in plasma-enhanced atomic layer deposition
Growth mechanism of Al2O3 film on an organic layer in plasma-enhanced atomic layer deposition
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DOI：
10.1088/1361-6463/aa9941
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发表时间：
2018-01
期刊：
影响因子：
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通讯作者：
J. Y. Lee;D. W. Kim;W. Kang;J. O. Lee;M. Hur;S. H. Han
中科院分区：
文献类型：
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作者：
J. Y. Lee;D. W. Kim;W. Kang;J. O. Lee;M. Hur;S. H. Han
研究了在等离子体增强原子层沉积的情况下，硅片和CxHy层上Al2O3薄膜的物理和化学性质的差异。Si表面的Al2O3膜比CxHy表面的Al2O3膜具有更清晰的界面和更小的厚度。Al2O3在CxHy表面的碳杂质含量大于Al2O3在Si表面的碳杂质含量。为了了解这些差异，利用x射线光电子能谱（XPS）深度谱分析了Al2O3薄膜中Al、O、C和Si原子的浓度。利用时间分辨发射光谱（OES）分析了不同沉积循环次数下CO分子的发射强度。最后，基于硅片和氧化硅层的XPS和OES结果，提出了Al2O3在有机层上的生长机理。
Differences in the physical and chemical properties of Al2O3 films on a Si wafer and a CxHy layer were investigated in the case of plasma-enhanced atomic layer deposition. The Al2O3 film on the Si had a sharper interface and lower thickness than the Al2O3 film on the CxHy. The amount of carbon-impurity near the interface was larger for Al2O3 on the CxHy than for Al2O3 on the Si. In order to understand these differences, the concentrations of Al, O, C, and Si atoms through the Al2O3 films were evaluated by using x-ray photoelectron spectroscopy (XPS) depth profiling. The emission intensities of CO molecule were analyzed for different numbers of deposition cycles, by using time-resolved optical emission spectroscopy (OES). Finally, a growth mechanism for Al2O3 on an organic layer was proposed, based on the XPS and OES results for the Si wafer and the CxHy layer.