On the Structure and Electrical Properties of Electroless Ni‐B Films
On the Structure and Electrical Properties of Electroless Ni‐B Films
复制标题
DOI：
10.1149/1.2134363
复制
发表时间：
1975-07
影响因子：
3.9
通讯作者：
N. Hedgecock;P. Tung;M. Schlesinger
中科院分区：
文献类型：
--
作者：
N. Hedgecock;P. Tung;M. Schlesinger
对化学沉积的Ni-B薄膜进行了电子显微镜研究和电阻率测量。与Ni-P膜相比，Ni-B膜的岛状结构具有明显的内部结构。与相同厚度的Ni-P膜相比，Ni-B膜具有更高的电阻率。使用碱性硼氢化物或胺硼烷作为还原剂，可以化学沉积Ni-B体系。戈尔迪对早期工作进行了综述(1)。最近由Fl~chon等人(2-4)、Petrov等人(5)和Gorbunova等人(6，7)进行了更多的研究。Ni-P和Ni-B的沉积状态都是高度无序的，热处理过程中的亚稳不可逆地导致更高的结晶度。在这两个体系中，初始状态都是磷(8)或硼(4，6)在镍中的固溶体。对于这项工作中研究的沉积物，磷和硼的原子含量分别约为20%和25%。
An electron microscope study and measurements of electrical resistivity have been performed on electrolessly deposited Ni-B thin films. In contrast to Ni-P films, the islands of Ni-B films show a marked internal structure. Ni-B films have higher electrical resistivity than equally thick Ni-P films.Electroless deposition of the nickel-boron system is possible using either alkali borohydrides or amine boranes as reducing agents. A survey of early work has been given by Goldie (1). More recent studies have been made by Fl~ chon et a~.(2-4), Petrov et al.(5), and Gorbunova et at.(6, 7). The as-deposited state of both Ni-P and Ni-B is highly disordered, and metastable in that heat-treatment irreversibly induces a state of higher crystallinity. In both systems, the initial state is a solid solution of phosphorus (8) or boron (4, 6) in nickel. For the deposits studied in this work the phosphorus and boron contents were about 20 and 25 per cent atomic, respectively.