Swift heavy ions effects in III-V nitrides
Swift heavy ions effects in III-V nitrides
复制标题
DOI：
10.1016/j.nimb.2008.03.124
复制
发表时间：
2008-06-01
影响因子：
1.3
通讯作者：
Lebius, H.
中科院分区：
文献类型：
--
作者：
Mansouri, S.;Marie, P.;Lebius, H.
用132 MeV Pb-209（32+）快重离子在GANIL加速器上以300 K正入射辐照BN、AlN、GaN和InN四种Ⅲ-V族氮化物。在辐照前，对样品进行离子减薄以进行TEM观察。硼和铝氮化物不像其他两种那样受到辐射的破坏。在氮化镓和氮化铟中，发现离子碰撞，形成圆形区域。它们的直径分别为3和8 nm。事实上，在离子碰撞周围可以区分两个区域：内部部分归因于沿着沿着离子路径形成的轨迹的部分并且对应于再结晶材料，而外部部分归因于应变材料。对于InN，结构缺陷、位错或间隙环局限于两个区域之间的界面处和内部。(C)2008 Elsevier B. V.保留所有权利。
Four III-V nitrides, BN, AIN, GaN and InN have been irradiated under normal incidence at 300 K at GANIL (Caen, France) accelerator with 132 MeV Pb-209(32+) swift heavy ions. Specimens were ion thinned for TEM observations before irradiation. Boron and aluminium nitrides were undamaged by the irradiation unlike the two others. In gallium and indium nitrides, ion impacts are found, forming circular areas. Their diameters are 3 and 8 nm, respectively. In fact, two regions may be distinguished around the ion impact: the inner part attributed to the section of the track formed along the ion path and corresponding to re-crystallized material and the external part to a strained material. For InN, structural defects, dislocations or interstitial loops are localised at the interface between the two regions and in the inner part. (C) 2008 Elsevier B.V. All rights reserved.