Electronic structure of antimonene grown on Sb2Te3 (111) and Bi2Te3 substrates
Electronic structure of antimonene grown on Sb2Te3 (111) and Bi2Te3 substrates
复制标题
在 Sb2Te3 (111) 和 Bi2Te3 衬底上生长的锑烯的电子结构
DOI：
10.1063/1.4939281
复制
发表时间：
2016-01-07
影响因子：
3.2
通讯作者：
Ibrahim, Kurash
中科院分区：
文献类型：
--
作者：
Lei, Tao;Liu, Chen;Ibrahim, Kurash
我们首次探索了在Bi2Te3和Sb2Te3衬底上形成单层Sb(111)超薄膜(Sb)，理论上认为它是一种坚固的平凡半导体，但可以通过降低屈曲高度来调谐到2DTI。角度分辨光电子能谱测量表明，锑在两种表面都能很好地生长，并表现出明显的能带弥散。锑的电子结构在两个表面上表现出相似的特征，但由于界面应变效应，锑在Bi2Te3上的能带比在Sb2Te3上平坦，这归因于Bi2Te3衬底的晶格常数比Sb2Te3大。同时，通过芯能级的移动也观察到了电荷转移效应，同时也影响了能带的色散。(C)2016 AIP出版有限责任公司。
We explore the formation of single bilayer Sb(111) ultrathin film (Antimonene) on Bi2Te3 and Sb2Te3 substrates for the first time, which is theoretically predicated to be a robust trivial semiconductor but can be tuned to a 2D TI by reducing the buckling height. From angle-resolved photoemission spectroscopy measurements, the antimonene can be well grown on the two surfaces and shows clear band dispersion. The electronic structure of the antimonene shows similar character on the two surfaces, but due to the interfacial strain effect, the bands of antimonene on Bi2Te3 are flatter than on Sb2Te3, which attributes to Bi2Te3 substrate lattice constants lager than Sb2Te3. At the same time, the charge transfer effect is also observed through core level shift, which influences the band dispersion simultaneously. (c) 2016 AIP Publishing LLC.