SEMICLASSICAL THEORY OF NOISE IN SEMICONDUCTOR-LASERS .2.
SEMICLASSICAL THEORY OF NOISE IN SEMICONDUCTOR-LASERS .2.
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DOI:
10.1109/jqe.1983.1071984
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发表时间:
1983-01-01
影响因子:
2.5
通讯作者:
YARIV, A
中科院分区:
文献类型:
--
作者:
VAHALA, K;YARIV, A
A model of semiconductor laser noise is presented which includes the carrier density as a dynamical variable and the carrier density dependence of the refractive index. The Van der Pol laser noise model is shown to he a special case of this treatment. Expressions are calculated for all laser spectra and compared with their Van der Pol counterparts. The power fluctuations spectrum and the frequency fluctuations spectrum exhibit a resonance corresponding to the relaxation resonance and the field spectrum contains fine structure, similar to sidebands which result from harmonic frequency modulation of a carrier signal. The role of carrier noise in determining the field spectrum linewidth is also considered.