SEMICLASSICAL THEORY OF NOISE IN SEMICONDUCTOR-LASERS .2.

SEMICLASSICAL THEORY OF NOISE IN SEMICONDUCTOR-LASERS .2.
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DOI:
10.1109/jqe.1983.1071984
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发表时间:
1983-01-01
影响因子:
2.5
通讯作者:
YARIV, A
YARIV, A
中科院分区:
工程技术3区
文献类型:
--
作者:
VAHALA, K;YARIV, A

文献摘要

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本文提出了一种半导体激光器噪声模型,该模型以载流子密度为动力学变量,并考虑了载流子密度与折射率的关系。货车der Pol激光噪声模型是这种处理的一个特例。所有的激光光谱的表达式进行了计算,并与他们的货车德波尔同行。功率波动谱和频率波动谱表现出对应于弛豫共振的共振,并且场谱包含精细结构,类似于由载波信号的谐波频率调制产生的边带。载波噪声在确定场谱线宽的作用也被认为是。
A model of semiconductor laser noise is presented which includes the carrier density as a dynamical variable and the carrier density dependence of the refractive index. The Van der Pol laser noise model is shown to he a special case of this treatment. Expressions are calculated for all laser spectra and compared with their Van der Pol counterparts. The power fluctuations spectrum and the frequency fluctuations spectrum exhibit a resonance corresponding to the relaxation resonance and the field spectrum contains fine structure, similar to sidebands which result from harmonic frequency modulation of a carrier signal. The role of carrier noise in determining the field spectrum linewidth is also considered.