Current-perpendicular-to-plane multilayer sensors for magnetic recording
Current-perpendicular-to-plane multilayer sensors for magnetic recording
复制标题
用于磁记录的电流垂直于平面的多层传感器
DOI：
10.1109/tmag.2003.809859
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发表时间：
2003
影响因子：
2.1
通讯作者：
R. Rottmayer
中科院分区：
文献类型：
--
作者：
M. Seigler;P. V. Heijden;A. Litvinov;R. Rottmayer
我们研究了电流垂直于平面的巨磁阻多层（CPP-ML）传感器，其有效区域为(1.0 nm CoFe/1.8 nm Cu) / sp1次/ 15 nm。这些传感器可以使屏蔽间的间距小于50纳米。方形pcp - ml器件的尺寸范围从120到365纳米的一面已经制造和测试。在本文中，我们重点研究了140 nm器件的磁输运性质，并在室温下进行了测量。平均器件特性R/sub max/=1.0 /spl Omega/, R/sub min/=0.81 /spl Omega/， DR=191.1 /spl Omega/, DR/R/sub min/=23.7。这些值是通过使用四点探针几何测量的；数据没有对引线或接触电阻进行校正，也没有观察到电流拥挤。经缓冲层和种子层电阻校正后，磁电阻的内在DR/R/sub min/值为55.6%。我们的测量结果与用简单的双电流串联电阻模型得到的值吻合得很好。我们证明了我们的CPP-ML结构是替代平面内电流自旋阀作为下一代磁记录回读传感器的可行候选者。
We investigated current-perpendicular-to-plane giant magnetoresistance multilayer (CPP-ML) sensors with an active region of (1.0-nm CoFe/1.8-nm Cu) /spl times/ 15 nm. These sensors would allow a shield-to-shield spacing of less than 50 nm. Square CPP-ML devices ranging in size from 120 to 365 nm on a side have been fabricated and tested. In this paper, we focus on the magnetotransport properties of the 140 nm devices, which were measured at room temperature. The average device characteristics were found to be R/sub max/=1.0 /spl Omega/, R/sub min/=0.81 /spl Omega/, DR=191.1 /spl Omega/, and DR/R/sub min/=23.7. These values were measured by using a four-point probe geometry; the data were not corrected for lead or contact resistance and no current crowding was observed. After correction for buffer and seed layer resistances, the magnetoresistance had an intrinsic DR/R/sub min/ value of 55.6%. Our measured results are in good agreement with values obtained with a simple two-current series resistance model. We demonstrate that our CPP-ML structures are viable candidates to replace current-in-plane spin valves as the next generation magnetic recording readback sensor.