Energy Band Parameters of Germanium Indicated by Tunnel Diode Reverse Characteristics
Energy Band Parameters of Germanium Indicated by Tunnel Diode Reverse Characteristics
复制标题
隧道二极管反向特性指示的锗能带参数
DOI：
10.1063/1.1702766
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发表时间：
1963
影响因子：
3.2
通讯作者：
W. Carr
中科院分区：
文献类型：
--
作者：
W. Carr
一个精确的方法来分析的反向偏置结的电流-电压特性，允许直接观察到的电压电平对应的隧道进入几个能量子带的锗的发病。实验技术包括将实验数据拟合到公式J = αV exp（−βV）中，该公式来自普莱斯、拉德克利夫和凯恩的计算。与每个子带的隧穿相互作用的开始在覆盖反向偏置范围的图中被标记为结构。对应于能带最小值的能量分离的EΓ2 − RL 1和EΔ1 − EL 1的值分别为0.152±0.005和0.208±0.008 eV，对于在4.2°K下轻微简并的n-型材料，通过将当前数据与以下的光学数据进行比较，发现传导能带各自更靠近价带能级以增加简并度：Pankove和Aigrain的直接带隙。能量间隔的各种导带极小被发现r…
A precise method for analyzing the current—voltage characteristic of the reverse biased junction has permitted a direct observation of the voltage levels corresponding to the onset of tunneling into several energy subbands of germanium. The experimental technique involves fitting the experimental data to an equation of the form J = αV exp (−βV) derived from the calculations of Price, Radcliffe, and Kane. The onset of the tunneling interaction with each subband is noted as structure in the plots covering the reverse bias range. The values for EΓ2 − RL1 and EΔ1 − EL1, corresponding to the energy separations of the band minima, are found to be 0.152±0.005 and 0.208±0.008 eV, respectively, for slightly degenerate n‐type material at 4.2°K.The conduction energy bands are each found to move closer to the valence band level for increasing degeneracy by comparing the present data with the optical data of Pankove and Aigrain for the direct band gap. Energy spacing of the various conduction band minima is found to r...