Ultrahigh Throughput Silicon Nanomanufacturing by Simultaneous Reactive Ion Synthesis and Etching
Ultrahigh Throughput Silicon Nanomanufacturing by Simultaneous Reactive Ion Synthesis and Etching
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DOI：
10.1021/nn2024754
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发表时间：
2011-10-01
期刊：
影响因子：
17.1
通讯作者：
Liu, G. Logan
中科院分区：
文献类型：
--
作者：
Chen, Yi;Xu, Zhida;Liu, G. Logan
一维纳米结构，如纳米晶须、纳米棒、纳米线、纳米柱、纳米锥、纳米尖、纳米针等，由于其在电子学、光子学、能量转换和储存以及与生物分子和活细胞的界面连接等方面的广泛应用，在过去的几十年里引起了人们的广泛关注。纳米结构化器件的制造依赖于自下而上的方法（诸如合成或生长工艺）或自上而下的方法（诸如光刻或蚀刻工艺）。在这里，我们报告了一个独特的，同步的，同时自上而下和自下而上的纳米纤维的方法，称为同步等离子体增强反应离子合成和蚀刻（SPERISE）。第一次同时观察和predsely控制在一个单一的步骤过程中，允许超高产量，光刻，晶圆级，和室温纳米制造的纳米材料的原子加法和减法。在单晶和多晶硅晶片以及非晶硅薄膜上展示了高密度、高均匀性、陷光纳米锥阵列的快速低成本制造。提出的纳米加工机制也提供了一个一般的指导方针，设计新的SPERISE方法，除硅以外的其他固态材料。
One-dimensional nanostructures, such as nanowhisker, nanorod, nanowire, nanopillar, nanocone, nanotip, nanoneedle, have attracted significant attentions in the past decades owing to their numerous applications in electronics, photonics, energy conversion and storage, and interfacing with biomolecules and living cells. The manufacturing of nanostructured devices relies on either bottom-up approaches such as synthesis or growth process or top-down approaches such as lithography or etching process. Here we report a unique, synchronized, and simultaneous top-down and bottom-up nanofabrication approach called simultaneous plasma enhanced reactive ion synthesis and etching (SPERISE). For the first time the atomic addition and subtraction of nanomaterials are concurrently observed and predsely controlled in a single-step process permitting ultrahigh-throughput, lithography-less, wafer-scale, and room-temperature nanomanufacturing. Rapid low-cost manufacturing of high-density, high-uniformity, light-trapping nanocone arrays was demonstrated on single crystalline and polycrystalline silicon wafers, as well as amorphous silicon thin films. The proposed nanofabrication mechanisms also provide a general guideline to designing new SPERISE methods for other solid-state materials besides silicon.