Growth of self-assembled InP quantum islands for red-light-emitting injection lasers
Growth of self-assembled InP quantum islands for red-light-emitting injection lasers
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用于红光发射注入激光器的自组装 InP 量子岛的生长
DOI：
10.1109/2944.865103
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发表时间：
2000
影响因子：
4.9
通讯作者：
A. Hangleiter
中科院分区：
文献类型：
--
作者：
J. Porsche;M. Ost;F. Scholz;A. Fantini;F. Phillipp;T. Riedl;A. Hangleiter
为了实现在光谱的可见光部分的激光发射，我们已经研究了自组装InP量子点的生长在GaInP的低压金属有机物气相外延（MOVPE）使用的Stranski-Krastanow生长模式。与成熟的InAs-GaAs系统不同，当InP沉积在GaInP上时，通常形成两种类型的具有不同尺寸的相干应变岛。当使用具有减少的表面扩散的生长条件时，高密度的小岛是有利的，即，低温、高生长速率和具有高取向差角的衬底。在580/spl deg/C下在GaAs衬底上以与下一个[111] B平面的表面角为15/spl deg/沉积3.4个InP单层之后，组装了每平方厘米2.10/sup 10/ InP点，平均高度为4 nm。这些InP岛在1.72 eV（4.2 K）的发射显示出42 meV的不均匀加宽，因为量子点的尺寸波动。在90 K时，在阈值电流密度为288 A/cm/sup 2/以上，观察到了InP量子岛的激光输出。检测到的激光线位于1.8 eV，约80 meV高于基态跃迁能量。我们将这种行为归因于与功率相关的光致发光实验一致的激发态激光。当温度高于150 K时，由于载流子的热激活逃逸，阈值电流密度急剧增加，在室温下可达4.9 k17/cm/sup 2/，而特征温度为35 K。包含堆叠的InP量子岛和具有较高带偏移的AlGaInP阻挡层的注入激光器可以表现出改善的温度依赖性。
In order to achieve laser emission in the visible part of the spectrum, we have investigated the growth of self-assembled InP quantum dots on GaInP by low-pressure metal-organic vapor phase epitaxy (MOVPE) using the Stranski-Krastanow growth mode. Unlike the well-established InAs-GaAs system, when InP is deposited on GaInP, typically, two types of coherently strained islands with different sizes are formed. A high density of small islands is favored when using growth conditions with a reduced surface diffusion, i.e., low temperatures, high growth rates, and substrates with high misorientation angles. After the deposition of 3.4 monolayers of InP at 580/spl deg/C on GaAs-substrates with a surface angle of 15/spl deg/ to the next [111]B-plane, 2.10/sup 10/ InP dots per square centimeter with an average height of 4 nm were assembled. The emission of these InP islands at 1.72 eV (4.2 K) shows an inhomogeneous broadening of 42 meV because of the size fluctuation of the quantum dots. At 90 K, lasing from self-assembled InP quantum islands was observed above a threshold current density of 288 A/cm/sup 2/. The detected laser line is located at 1.8 eV, about 80 meV higher than is the ground-state transition energy. We attribute this behavior to lasing from excited states in agreement with power-dependent photoluminescence experiments. For temperatures above 150 K, the threshold current density increases dramatically because of a thermally activated escape of carriers up to 4.9 k17/cm/sup 2/ at room temperature, where the characteristic temperature is 35 K. Injection lasers containing stacked InP quantum islands and AlGaInP barrier layers with a higher band offset may exhibit an improved temperature dependence.