Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions
Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions
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DOI：
10.1063/1.5027520
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发表时间：
2018-06-07
影响因子：
3.2
通讯作者：
Teherani, James T.
中科院分区：
文献类型：
--
作者：
Nipane, Ankur;Zhang, Yefei;Teherani, James T.
二维材料由于其独特的性能使新型电子和光电子器件成为可能。设备建模通过提供对底层物理的洞察，在开发这些新型设备中起着重要作用。在这项工作中，我们提出了模拟的面外介电厚度对原子薄材料形成的横向结的静电的巨大影响。我们表明，与体结不同，模拟区域边缘的边界条件通过改变面外电场显著影响二维（2D）侧结的静电。我们还提出了对施加在模拟区域边界上的诺伊曼边界条件的直观理解。诺伊曼边界条件通过产生设备在边界上的反射来改变预期的模拟。最后，我们推导了对称掺杂二维横向pn结的最小介电厚度，在此厚度之上，面外模拟区域边界对模拟电场、静电势和结的耗尽宽度的影响最小。AIP出版社出版。
Two-dimensional materials enable novel electronic and optoelectronic devices due to their unique properties. Device modeling plays a fundamental role in developing these novel devices by providing insights into the underlying physics. In this work, we present the dramatic impact of the simulated out-of-plane dielectric thickness on the electrostatics of lateral junctions formed from atomically thin materials. We show that unlike bulk junctions, the boundary conditions on the edges of the simulation region significantly affect the electrostatics of two-dimensional (2D) lateral junctions by modifying the out-of-plane electric field. We also present an intuitive understanding of the Neumann boundary conditions imposed on the boundaries of the simulation region. The Neumann boundary conditions alter the intended simulation by generating reflections of the device across the boundaries. Finally, we derive a minimal dielectric thickness for a symmetrically doped 2D lateral p-n junction, above which the out-of-plane simulation region boundaries minimally affect the simulated electric field, electrostatic potential, and depletion width of the junction. Published by AIP Publishing.