Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells
Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells
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DOI：
10.1103/physrevb.75.165309
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发表时间：
2006-10
影响因子：
3.7
通讯作者：
W. Leyland;G. John;R. T. Harley;M. Glazov;E. Ivchenko;D. Ritchie;A. Shields;M. Henini
中科院分区：
文献类型：
--
作者：
W. Leyland;G. John;R. T. Harley;M. Glazov;E. Ivchenko;D. Ritchie;A. Shields;M. Henini
我们提出了一个详细的实验和理论分析的自旋动力学的二维电子气（2DEGs）在一系列的n掺杂GaAs/AlxGa 1？xAs量子威尔斯阱。皮秒分辨率的偏振泵浦探测反射技术，以详细研究的温度，浓度和量子阱宽度的依赖性的自旋弛豫速率的一个小的光激发电子人口。实验证明了自旋寿命随温度的快速增强，最大值接近2DEG的费米温度。这些观察结果与电子-电子碰撞控制的D 'yakonov-Perel'自旋弛豫机制一致。自旋弛豫时间的实验结果和理论预测是在很好的定量协议。
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlxGa1?xAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature, concentration, and quantum-well-width dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin lifetime with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin-relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.