Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S2CNMeHex)3, by low-pressure metal-organic chemical vapor deposition
Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S2CNMeHex)3, by low-pressure metal-organic chemical vapor deposition
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DOI：
10.1021/cm9905040
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发表时间：
1999-12-01
影响因子：
8.6
通讯作者：
Park, JH
中科院分区：
文献类型：
--
作者：
Lazell, MR;O'Brien, P;Park, JH
用LP-MOCVD方法从三（N，N-甲基己基二硫代氨基甲酸）镓（Ⅲ）（Ga（S（2）CNMeHex）（3））中制备了α-Ga_2S_3多晶薄膜。薄膜在GaAs（111）单晶衬底上从475到500 ℃生长，并通过XPS、EDAX、SEM和XRD进行表征。XPS分析显示仅存在镓和硫峰。这些研究表明，二硫代氨基甲酸盐化合物是有吸引力的单源前驱体沉积金属硫化物薄膜。
Polycrystalline (alpha-Ga2S3 films have been prepared from tris(N,N-methylhexyldithiocarbamato)gallium(III), Ga(S(2)CNMeHex)(3), by LP-MOCVD. The films were grown from 475 to 500 degrees C on GaAs(111) single-crystal substrates and characterized by XPS, EDAX, SEM, and XRD. XPS analysis shows only gallium and sulfur peaks are present. These studies demonstrate that dithiocarbamate compounds are attractive single-source precursors for the deposition of metal sulfide thin films.