Self-formed silicon quantum wires on ultrasmooth sapphire substrates
Self-formed silicon quantum wires on ultrasmooth sapphire substrates
复制标题
超光滑蓝宝石衬底上的自形成硅量子线
DOI：
10.1063/1.119908
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发表时间：
1997
影响因子：
4
通讯作者：
H. Koinuma
中科院分区：
文献类型：
--
作者：
S. Yanagiya;Shunsuke Kamimura;M. Fujii;M. Ishida;Y. Moriyasu;M. Matsui;M. Yoshimoto;T. Ohnishi;K. Yoshida;K. Sasaki;H. Koinuma
利用气体源分子束外延技术，首次在超光滑蓝宝石衬底上观察到了Si在蓝宝石衬底上的阶梯流生长，并在衬底上制备了自形成的Si量子线。这些线沿着衬底台阶排列，并均匀地形成为50 nm宽和1 nm高。在9 K和300 K下观察到了金属丝的可见光致发光。线的光学性质与在常规多孔硅和其他纳米结构硅中观察到的光学性质非常相似。
We have observed step-flow growth of Si on sapphire, for the first time, by gas-source molecular beam epitaxy using ultrasmooth sapphire substrates, and self-formed Si quantum wires were fabricated on the substrates. The wires were aligned along the substrate steps and formed uniformly with 50 nm width and 1 nm height. Visible photoluminescence from the wires was observed at 9 and 300 K. The optical properties of the wires were very similar to those observed in conventional porous silicon and other nanostructured silicon.
影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM