Synthesis and carbothermal nitridation mechanism of ultra-long single crystal alpha-Si3N4 nanobelts
Synthesis and carbothermal nitridation mechanism of ultra-long single crystal alpha-Si3N4 nanobelts
复制标题
超长单晶α-Si3N4纳米带的合成及碳热氮化机理
DOI:
10.1088/1361-6528/ab6fd7
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发表时间:
2020
期刊:
影响因子:
3.5
通讯作者:
Ishizaki Kozo
中科院分区:
文献类型:
--
作者:
Wang Bo;Huang Xin;Zhou Xiao-Nan;Zhi Qiang;Hao Liu-Cheng;Li Zi-Xuan;Zhao Shan;Hou Bao-Qiang;Yang Jian-Feng;Ishizaki Kozo
One-dimensional Si3N4 nanostructures are desirable for constructing nanoscale electric and optoelectronic devices due to their peculiar morphologies. Herein, a facile and environmentally friendly catalyst-free method is proposed to synthesize ultra-long single crystal α-Si3N4 nanobelts via carbothermal nitridation of carbon nanotubes at 1750 °C. The obtained α-Si3N4 nanobelts with a flat surface (thickness of ∼150 nm, length of several millimeters) exhibited an extremely high aspect ratio, perfect crystal structure, and high specific surface area of 7.34–10.09 m2 g−1. In addition, the width was increased from approximately 80 nm to 8 μm by increasing the holding time from 1 to 3 h. The nanobelt formation was governed by the vapor–solid (VS) reaction between SiO vapor, N2 and carbon nanotubes, and the vapor–vapor reaction between SiO, CO and N2. The former was responsible for the initial nucleation and successive base-growth of α-Si3N4 nanotubes. The latter additionally contributed to the nanorod and subsequent proto-nanobelt formation and to the growth of the nanobelts. During high-temperature annealing at 1750 °C, the original Si3N4 nanotubes gradually transformed into nanorods, and, finally, nanobelts with stable shapes as a result of surface energy minimization.