Photosensitive field emitters including a-Si:H p-i-n photodetection region
Photosensitive field emitters including a-Si:H p-i-n photodetection region
复制标题
光敏场发射器，包括 a-Si:H p-i-n 光电检测区域
DOI：
10.1109/16.658848
复制
发表时间：
1998
影响因子：
3.1
通讯作者：
T. Ando
中科院分区：
文献类型：
--
作者：
K. Sawada;N. Matsumura;T. Ando
提出了一种称为“光敏浮动场发射体”的新型光敏场发射体。光敏场发射体是使用 n 型 Si 场发射体尖端和 a-Si:H p-i-n 光电二极管薄膜构建的。通过在n型锥形硅发射体阵列背面沉积本征a-Si:H和p型a-SiC:H薄膜制备了背入射型光敏浮动场发射体。测量了作为照明强度函数的发射电流，并描述了光敏浮动场发射器的操作。使用光敏场发射体的等效电路证实了具有超过单位有效量子效率的光敏器件的可能性，该光敏场发射体由锥形场发射体（n型Si）和雪崩光电二极管组成。观察到发射电流超过单位量子效率。
A new photosensitive field emitter termed "photosensitive floating field emitter" is proposed. The photosensitive field emitter was constructed using an n-type Si field emitter tip and an a-Si:H p-i-n photodiode film. A back incidence type photosensitive floating field emitter was fabricated by depositing intrinsic a-Si:H and p-type a-SiC:H film on the back of n-type cone-shaped Si emitter array. The emission current as a function of the illumination intensity was measured and the operation of the photosensitive floating field emitter was described. The possibility of a photosensitive device with more than unit effective quantum efficiency was confirmed using an equivalent circuit for the photosensitive field emitter, which is composed of cone-shaped field emitters (n-type Si) and an avalanche photodiode. It is observed that the emission current exceeds the unit quantum efficiency.