Room temperature ferromagnetic properties of (Ga, Mn)N
Room temperature ferromagnetic properties of (Ga, Mn)N
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DOI：
10.1063/1.1419231
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发表时间：
2001-11-19
影响因子：
4
通讯作者：
Bedair, SM
中科院分区：
文献类型：
--
作者：
Reed, ML;El-Masry, NA;Bedair, SM
通过锰掺杂实现了居里温度高于室温的稀磁半导体GaN。通过改变Mn掺杂GaN的生长和退火条件，我们确定了228-370 K范围内的居里温度。这些Mn掺杂的GaN薄膜具有铁磁行为，磁滞曲线显示的矫顽力为100-500 Oe。通过X射线衍射和透射电子显微镜的结构表征表明，铁磁性能是不是由于二次磁相。(C)2001年美国物理学会。
Dilute magnetic semiconductor GaN with a Curie temperature above room temperature has been achieved by manganese doping. By varying the growth and annealing conditions of Mn-doped GaN we have identified Curie temperatures in the range of 228-370 K. These Mn-doped GaN films have ferromagnetic behavior with hysteresis curves showing a coercivity of 100-500 Oe. Structure characterization by x-ray diffraction and transmission electron microscopy indicated that the ferromagnetic properties are not a result of secondary magnetic phases. (C) 2001 American Institute of Physics.