Geometric orbital magnetization in adiabatic processes
Geometric orbital magnetization in adiabatic processes
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DOI：
10.1103/physrevb.100.054408
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发表时间：
2019-04
影响因子：
3.7
通讯作者：
Luka Trifunovic;Seishiro Ono;Haruki Watanabe
中科院分区：
文献类型：
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作者：
Luka Trifunovic;Seishiro Ono;Haruki Watanabe
我们考虑有隙多体无自旋电子的周期绝热过程。我们发现了绝热时间演化对轨道磁化的额外贡献，称为织构轨道磁化，它可以表示为多体Berry相相对于外部磁场的导数。对于二维带状绝缘体，我们证明了几何轨道磁化强度一般由两部分组成，即在$(t，k_x，k_y)$空间中表示为三阶Chern-Simons形式的拓扑片和非拓扑片，它依赖于Bloch态和占据和未占据带的能量。
We consider periodic adiabatic processes of gapped many-body spinless electrons. We find an additional contribution to the orbital magnetization due to the adiabatic time evolution, dubbed \textit{geometric} orbital magnetization, which can be expressed as derivative of the many-body Berry phase with respect to an external magnetic field. For two-dimensional band insulators, we show that the geometric orbital magnetization generally consists of two pieces, the topological piece that is expressed as third Chern-Simons form in $(t,k_x,k_y)$ space, and the non-topological piece that depends on Bloch states and energies of both occupied and unoccupied bands.