Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays
Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays
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基于InGaAs量子线阵列的分布式反馈增益耦合激光器
DOI：
10.1109/68.554152
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发表时间：
1997
影响因子：
2.6
通讯作者：
F. Reinhart
中科院分区：
文献类型：
--
作者：
J. Robadey;U. Marti;R. Miles;M. Glick;F. Filipowitz;M. Achtenhagen;D. Martin;F. Morier;P.C. Silva;Y. Magnenat;P. Jouneau;F. Bobard;F. Reinhart
报道了一种工作在77K、波长为923 nm的电流注入型InGaAs-GaAs量子线增益耦合分布反馈(DFB)激光器的制作和特性。测得大面积激光器的阈值电流密度低至160A/cm/sup~2/。在两倍阈值下的边模抑制比为35d B。4/SPL mU/m脊形光波导器件的阈值为14 mA。介绍了采用深紫外光全息术和湿法化学腐蚀技术制作的二阶DFB光栅的图案化工艺。
Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented. Threshold current densities in broad area lasers were measured to be as low as 160 A/cm/sup 2/. The side-mode suppression ratio at twice threshold is 35 dB. A 4-/spl mu/m rib waveguide device has a threshold of 14 mA. The patterning process for the second-order DFB grating fabricated with deep UV holography and wet-chemical etching is described.