Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers
Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers
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DOI：
10.1063/1.2771374
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发表时间：
2007-08
影响因子：
4
通讯作者：
I. O'Driscoll;T. Piwoński;C. Schleussner;J. Houlihan;G. Huyet;R. Manning
中科院分区：
文献类型：
--
作者：
I. O'Driscoll;T. Piwoński;C. Schleussner;J. Houlihan;G. Huyet;R. Manning
单色和双色泵浦探测测量被用来分析载流子动力学在InAs scinGaAs量子点放大器。研究表明，空穴恢复和点内电子弛豫发生在皮秒的时间尺度上，而电子捕获时间为10ps量级。一个更长的时间尺度的数百皮秒与载流子恢复在润湿层，类似于量子阱半导体放大器中观察到的。
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.