4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication
4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication
复制标题
通过多型复制在 4H-SiC(112̄0) 衬底上生长 4H 多型 AlN
DOI：
10.1063/1.1636533
复制
发表时间：
2003
影响因子：
4
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
N. Onojima;J. Suda;T. Kimoto;H. Matsunami
采用等离子体辅助分子束外延技术在（1120）面的4 H-SiC衬底上生长了4 H-AlN多型体。用高分辨透射电子显微镜观察了AlN/4 H-SiC界面的微观结构，证实了4 H结构在4 H-SiC（1120）衬底上的多型复制。单晶4 H-AlN外延层的（1120）衍射的X射线摇摆曲线显示出90弧秒的非常小的线宽，表明围绕[1120]方向的显著小的倾斜。 这种优异的结晶质量可能是由于4 H-AlN外延层与4 H-SiC衬底之间的多型匹配导致界面缺陷显著减少。
4H-polytype AlN has been grown on a 4H-SiC substrate with the (1120) face via plasma-assisted molecular-beam epitaxy. The microscopic structure of the AlN/4H-SiC interface was examined using high-resolution transmission electron microscopy, and the polytype replication of the 4H structure from the 4H-SiC(1120) substrate was evidently confirmed. The x-ray rocking curve of (1120) diffraction for the single crystalline 4H-AlN epilayer exhibited a very small linewidth of 90 arc sec, suggesting noticeably small tilting around the [1120] direction. The excellent crystalline quality is probably owing to the polytype matching between the 4H-AlN epilayer and the 4H-SiC substrate, which resulted in remarkable reduction of defects at the interface.