Transparent Conducting Al-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition
Transparent Conducting Al-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition
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DOI：
10.1143/jjap.35.l56
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发表时间：
1996
影响因子：
1.5
通讯作者：
A. Suzuki;T. Matsushita;N. Wada;Y. Sakamoto;M. Okuda
中科院分区：
文献类型：
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作者：
A. Suzuki;T. Matsushita;N. Wada;Y. Sakamoto;M. Okuda
采用ArF激光器（λ=193 nm），用脉冲激光沉积技术在玻璃衬底上沉积了ZnO：Al薄膜。对于所有实验，假设重复频率为10 Hz，能量密度为1 J/cm 2，照射时间为20-30 min（12000-18000次照射）。对于150-200 nm厚的膜，在光谱的可见光区观察到约90%的光学透射率。在300°C和室温下，薄膜的电阻率分别为1.43×10-4 Ω·cm和5.62×10-4 Ω·cm。
Thin films of ZnO:Al have been deposited on glass substrates by a pulsed laser deposition technique employing an ArF laser ( λ=193 nm). For all experiments, a repetition rate of 10 Hz, an energy density of 1 J/cm2, and an irradiation time of 20–30 min (12000–18000 shots) were assumed. Optical transmittance of around 90% was observed in the visible region of the spectrum for the 150–200 nm thick film. Resistivities of 1.43×10-4 Ω·cm and 5.62×10-4 Ω·cm were obtained at substrate temperatures of 300°C and room temperature, respectively.