Observation of molecules adsorbed on III-V semiconductor quantum dots by surface-enhanced Raman scattering
Observation of molecules adsorbed on III-V semiconductor quantum dots by surface-enhanced Raman scattering
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DOI：
10.1021/ja031640f
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发表时间：
2004-06-16
影响因子：
15
通讯作者：
Quagliano, LG
中科院分区：
文献类型：
--
作者：
Quagliano, LG
本文首次报道了分子吸附在InAs/GaAs量子点上的表面增强拉曼散射（Sers）。这一结果非常有趣，因为以前Sers实验基本上仅限于吸附在金属表面上的分子。吸附在这些III-V量子点结构上的吡啶分子的拉曼散射相对于溶液中的相同分子强烈增强。Sers光谱中最有趣的特征是出现了一个新的振动带。我认为，这条线应归因于化学吸附的吡啶，这是通过协调其孤对电子的N原子的半导体表面形成的。这一工作为III-V族半导体量子点的表面增强拉曼Sers提供了明确的实验证据。纳米结构目前被认为是纳米器件的潜在构建块。这些器件的性能和可靠性在很大程度上取决于组成纳米材料的表面和界面性质。因此，这项工作说明了Sers光谱作为纳米科学中一种强大的新工具的巨大潜力。
I report for the first time surface-enhanced Raman scattering (SERS) from molecules adsorbed on InAs/GaAs quantum dots. This result is very interesting because previous SERS experiments have been essentially restricted to molecules adsorbed on metallic surfaces. Raman scattering from pyridine molecules adsorbed on these III-V quantum dots structures is strongly enhanced relative to the same molecules in solution. The most interesting feature in the SERS spectrum is the appearance of a new vibrational band. I suggest that this line should be attributed to the chemisorbed pyridine that is formed by coordination of its lone pair electrons of the N atom to the semiconductor surface. This work provides unambiguous experimental evidence for SERS on III-V semiconductor quantum dots. Nanostructures are currently considered as potential building blocks for nanodevices. The performance and reliability of these devices strongly depend on the surface and interfacial properties of the constituent nanomaterials. Therefore, this work illustrates the considerable potential of SERS spectroscopy as a powerful new tool in nanoscience.