Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers

Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers
复制标题

Ge1-xSnx 基 IV 族外延层电性能精确表征技术的发展

DOI:
--
复制
发表时间:
2023
期刊:
影响因子:
--
通讯作者:
and O. Nakatsuka
and O. Nakatsuka
中科院分区:
--
文献类型:
--
作者:
T. Mori;S. Shibayama;K. Nishizawa;M. Sakashita;M. Kurosawa;and O. Nakatsuka

文献摘要

相似文献