Magnetoamplification in a bipolar magnetic junction transistor.
Magnetoamplification in a bipolar magnetic junction transistor.
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DOI：
10.1103/physrevlett.105.117202
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发表时间：
2010-09
影响因子：
8.6
通讯作者：
Nikhil Rangaraju;J. A. Peters;Bruce W. Wessels
中科院分区：
文献类型：
--
作者：
Nikhil Rangaraju;J. A. Peters;Bruce W. Wessels
我们已经展示了第一个使用稀磁半导体的双极磁结晶体管。对于InMnAs，在室温下观察到p-n-p晶体管的磁放大现象。观察到的磁放大效应归因于磁性半导体InMnAs异质结的磁阻效应。晶体管特性的磁场依赖关系证实了磁放大是由结磁电阻引起的。为了描述实验观察到的晶体管特性，我们提出了一个修正的Ebers-Moll模型，该模型包含了由自旋选择电导引起的串联磁阻。在室温下对全半导体晶体管中的放大进行磁场控制的能力潜在地能够创建利用载流子自旋的新的计算机逻辑体系结构。
We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized.