Finite-element modeling and micromagnetic modeling of perpendicular writers
Finite-element modeling and micromagnetic modeling of perpendicular writers
复制标题
垂直写入器的有限元建模和微磁建模
DOI：
10.1063/1.2159412
复制
发表时间：
2006
影响因子：
3.2
通讯作者：
S. Bozeman
中科院分区：
文献类型：
--
作者：
O. Heinonen;S. Bozeman
我们比较有限元建模（FEM）和全微磁建模结果的四个原型作家垂直记录。通常，对于诸如磁场、磁场梯度和写入宽度之类的量，在饱和或接近饱和的磁性材料（诸如极尖）附近，两个模型之间的一致性相当好。然而，在远离饱和的磁性材料附近，例如，返回极或后沿写屏蔽，可能存在大的定性和定量差异。
We compare finite-element modeling (FEM) and fully micromagnetic modeling results of four prototypical writers for perpendicular recording. In general, the agreement between the two models is quite good in the vicinity of saturated or near-saturated magnetic material, such as the pole tip, for quantities such as the magnetic field, the gradient of the magnetic field and the write width. However, in the vicinity of magnetic material far from saturation, e.g., return pole or trailing edge write shield, there can be large qualitative and quantitative differences.