Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism
Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism
复制标题
硼在碳化硅中的扩散：踢出机制的证据
DOI：
10.1063/1.1325390
复制
发表时间：
2000
影响因子：
4
通讯作者：
G. Pensl
中科院分区：
文献类型：
--
作者：
H. Bracht;N. Stolwijk;M. Laube;G. Pensl
本文报道了在1700 ~ 1800 °C温度范围内进行的注硼（B）在掺氮4 H和掺铝6 H-SiC中的扩散实验。 通过在扩散退火之前在900 °C下对B注入样品进行退火，有效地抑制了由注入损伤引起的瞬时增强的B扩散。 基于踢出机理，准确描述了二次离子质谱测量的B浓度分布。这提供了强有力的证据，Si自介导的B扩散主要。
We report diffusion experiments of implanted boron (B) in nitrogen-doped 4H- and aluminum-doped 6H-SiC which were performed at temperatures between 1700 and 1800 °C. Transient enhanced B diffusion caused by implantation damage was effectively suppressed by annealing of the B-implanted samples at 900 °C prior to the diffusion anneal. Concentration profiles of B measured with secondary ion mass spectrometry are accurately described on the basis of the kick-out mechanism. This provides strong evidence that Si self-interstitials mainly mediate B diffusion.