Characterization of tin (IV) oxide based semiconductor elements for electronic detection of methane
Characterization of tin (IV) oxide based semiconductor elements for electronic detection of methane
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DOI:
10.1109/smelec.2000.932311
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发表时间:
2000-11
期刊:
影响因子:
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通讯作者:
J. O. Dennis;Mohd. Khairi Saidin;M. M. A. Karim-M.;Md. Rahim Sahar
中科院分区:
文献类型:
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作者:
J. O. Dennis;Mohd. Khairi Saidin;M. M. A. Karim-M.;Md. Rahim Sahar
Tin (IV) oxide based semiconductor devices have been widely applied for the electronic detection of flammable, toxic and polluting gases in ambient air. However, the commercial devices available to date are used qualitatively to monitor CH/sub 4/ levels. This study reports a detailed analysis of CH/sub 4/ detection using sintered slabs of SnO/sub 2/ with Pd as additive. The intention is to investigate the possibility of quantitatively applying the material as the active element in methane-detecting devices. Conductance changes to CH/sub 4/ in air (at the ppm levels) are investigated with respect to composition of Pd content (in wt %) in SnO/sub 2/ and the effect of flow rate of the carrier gas. It was confirmed that the optimum composition of Pd content in SnO/sub 2/ for CH/sub 4/ detection is in the range 2-5wt%. The dependence of sensitivity of the elements on CH/sub 4/ concentration in the range 50-25,000 ppm was found to be logarithmic and the flow rate of the ambient gas was found to affect the sensitivity, response and recovery times of the sensor elements prepared by sintering at 900/spl deg/C. Surface morphology of the sintered elements studied by SEM facilitated a theoretical analysis of the mechanism of CH/sub 4/ detection using these elements.