Characterization of tin (IV) oxide based semiconductor elements for electronic detection of methane

Characterization of tin (IV) oxide based semiconductor elements for electronic detection of methane
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DOI:
10.1109/smelec.2000.932311
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发表时间:
2000-11
期刊:
ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)
影响因子:
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通讯作者:
J. O. Dennis;Mohd. Khairi Saidin;M. M. A. Karim-M.;Md. Rahim Sahar
J. O. Dennis;Mohd. Khairi Saidin;M. M. A. Karim-M.;Md. Rahim Sahar
中科院分区:
其他
文献类型:
--
作者:
J. O. Dennis;Mohd. Khairi Saidin;M. M. A. Karim-M.;Md. Rahim Sahar

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基于氧化锡(IV)的半导体器件已经广泛应用于环境空气中的易燃、有毒和污染气体的电子检测。然而,迄今为止可用的商业设备用于定性监测CH/sub 4/水平。本研究报告了详细的分析CH/sub 4/检测使用烧结板的SnO/sub 2/与Pd作为添加剂。其目的是调查的可能性,定量应用的材料作为活性元素的甲烷检测设备。电导变化CH/sub 4/在空气中(在ppm水平)进行了研究相对于组成的Pd含量(重量%)在SnO/sub 2/和载气的流量的影响。确定了用于CH/sub 4/检测的SnO/sub 2/中Pd含量的最佳组成为2- 5wt%。在50- 25,000 ppm范围内,发现元件的灵敏度对CH/sub 4/浓度的依赖性是对数的,并且发现环境气体的流速影响通过在900/spl deg/C下烧结制备的传感器元件的灵敏度、响应和恢复时间。通过SEM研究了烧结元件的表面形貌,为使用这些元件检测CH/sub 4/的机理提供了理论分析。
Tin (IV) oxide based semiconductor devices have been widely applied for the electronic detection of flammable, toxic and polluting gases in ambient air. However, the commercial devices available to date are used qualitatively to monitor CH/sub 4/ levels. This study reports a detailed analysis of CH/sub 4/ detection using sintered slabs of SnO/sub 2/ with Pd as additive. The intention is to investigate the possibility of quantitatively applying the material as the active element in methane-detecting devices. Conductance changes to CH/sub 4/ in air (at the ppm levels) are investigated with respect to composition of Pd content (in wt %) in SnO/sub 2/ and the effect of flow rate of the carrier gas. It was confirmed that the optimum composition of Pd content in SnO/sub 2/ for CH/sub 4/ detection is in the range 2-5wt%. The dependence of sensitivity of the elements on CH/sub 4/ concentration in the range 50-25,000 ppm was found to be logarithmic and the flow rate of the ambient gas was found to affect the sensitivity, response and recovery times of the sensor elements prepared by sintering at 900/spl deg/C. Surface morphology of the sintered elements studied by SEM facilitated a theoretical analysis of the mechanism of CH/sub 4/ detection using these elements.