Debris from tape-target irradiated with pulsed YAG laser
Debris from tape-target irradiated with pulsed YAG laser
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DOI:
10.1016/s0169-4332(02)00369-0
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发表时间:
2002-09
影响因子:
6.7
通讯作者:
H. Azuma;Y. Nishimura;Sakata Atsushi;A. Takeuchi
中科院分区:
文献类型:
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作者:
H. Azuma;Y. Nishimura;Sakata Atsushi;A. Takeuchi
For high brightness and debris-free laser-produced plasma EUV source, EUV spectra and debris were measured. The experimental debris scattering angle distribution and the amount of piled debris were estimated in the thickness of debris on silicon wafers from tape-target irradiated with pulsed YAG laser (SHG, E=0.8J, t=7ns) in more than 200,000 laser shots. The shape and size of debris were observed using scanning electron microscope. EUV spectra were obtained by using the grazing-incidence XUV spectrometer with the Au-coated toroidal mirror, diffraction grating and X-ray CCD camera. In 200,000 laser shots, for copper tape-target, 50nm thick debris at 50° from target normal and 30nm thick debris at more than 70° from target normal were obtained. More than 20μm in diameter debris of aluminum and less than 1μm in diameter debris of copper were observed. Laser-produced plasma EUV source system with low debris tape-target of thin metal and polymer films, debris-shield and debris-free EUV filter has been developed. We demonstrated successive 8h generation of EUV with the developed laser-produced plasma EUV source system for EUV lithography.