Fabrication of ultra‐high‐density InAs quantum dots using the strain‐compensation technique
Fabrication of ultra‐high‐density InAs quantum dots using the strain‐compensation technique
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DOI：
10.1002/pssa.201000432
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发表时间：
2011-02
期刊：
影响因子：
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通讯作者：
K. Akahane;N. Yamamoto;T. Kawanishi
中科院分区：
文献类型：
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作者：
K. Akahane;N. Yamamoto;T. Kawanishi
采用一种新的应变补偿技术在InP(311)B衬底上成功地生长了高度堆积的InAs量子点。堆积层数增加到300层，量子点密度达到2×1013/cm2，这是传统的量子点制作技术无法获得的。在高度堆积的样品中，量子点具有良好的尺寸均匀性，具有横向和垂直有序结构。此外，该样品在室温下表现出很强的1.55微米光致发光。
Highly‐stacked InAs quantum dots (QDs) were successfully grown on InP(311)B substrates using a novel strain‐compensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2 × 1013/cm2; this value cannot be obtained using conventional QD fabrication techniques. In a highly stacked sample, the QDs show good size uniformity with a lateral and vertical ordered structure. In addition, this sample exhibits strong 1.55 µm photoluminescence (PL) emission at room temperature.