Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy
Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy
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通过分子束外延生长的近全成分范围的高质量 GaAs1-xSbx 纳米线
DOI：
10.1021/acs.nanolett.6b03326
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发表时间：
2017-02-01
期刊：
影响因子：
10.8
通讯作者：
Zhao, Jianhua
中科院分区：
文献类型：
--
作者：
Li, Lixia;Pan, Dong;Zhao, Jianhua
本文报道了用分子束外延技术生长近全组分能隙可调的GaAs1-xSbx纳米线的Ga自催化生长。通过调节Sb和As的助熔剂以及As的本底，系统地生长了不同Sb含量的GaAs1-xSbx纳米线。我们发现低Sb含量的GaAs1-xSbx纳米线可以直接在Si(111)衬底(0)上生长。
Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAs1-xSbx nanowires by molecular-beam epitaxy. GaAs1-xSbx nanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAs1-xSbx nanowires with low Sb content can be grown directly on Si(111) substrates (0