Contact boundary conditions and the Dyakonov-Shur instability in high electron mobility transistors
Contact boundary conditions and the Dyakonov-Shur instability in high electron mobility transistors
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DOI：
10.1063/1.365895
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发表时间：
1997-08-01
影响因子：
3.2
通讯作者：
Crowne, FJ
中科院分区：
文献类型：
--
作者：
Crowne, FJ
Dyakonov和Shur提出了一种新的器件结构，这种结构基于对普通的高电子迁移率晶体管(HEMT)进行去偏置，同时使其源极和漏极受到不寻常的交流边界条件的影响[M.Dyakonov和M.Shur，Phys.莱特牧师。71,2465(1993)]，在这种情况下，HEMT通道内漂移的二维电子气就像一个捕获的单组分等离子体，在零偏压下表现出类似于管风琴管的衰减简正模振荡，并且在大偏压下表现出意想不到的不稳定性和增益。本文推广了Dyakanov和Shur的工作，允许等离子体有更多的流体动力学自由度。特别是，我们发现Dyakonov和Shur所用的描述必须被推广以包含更复杂的等离子体模式的图像。(C)1997年美国物理研究所。
Dyakonov and Shur have proposed a novel device structure based on de biasing an ordinary high electron mobility transistor (HEMT) while subjecting it to unusual ac boundary conditions at its source and drain [M. Dyakonov and M. Shur, Phys. Rev. Lett. 71, 2465 (1993)], Under these conditions, the drifting two-dimensional electron gas within the HEMT channel acts as a trapped one-component plasma which exhibits damped normal-mode oscillations similar to those of an organ pipe under zero de bias, and an unexpected instability and gain at large de biases. In this article, the work of Dyakanov and Shur is generalized by allowing the plasma more hydrodynamic degrees of freedom. In particular, it is found that the description used by Dyakonov and Shur must be generalized to incorporate a more complicated picture of the plasma modes. (C) 1997 American Institute of Physics.