Measurements of V-band n-type InSb junction circulators
Measurements of V-band n-type InSb junction circulators
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V 波段 n 型 InSb 结环行器的测量
DOI：
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发表时间：
2004
影响因子：
4.3
通讯作者：
R. Sloan
中科院分区：
文献类型：
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作者：
Z. M. Ng;L. Davis;R. Sloan
研制了一种V波段三端口鳍线结构的n型锑化铟（InSb）结环行器。本文首次演示了半导体结环行器在50-75 GHz频率范围内、77 K温度下的宽带工作。在所施加的磁通量密度为0.88 T的情况下，在整个波导频带上测量了大约10 dB的差分隔离。测量结果还表明，当半导体材料具有/spl epsiv//sub eff/<0时，循环是可能的。原则上，由于可以从/spl epsiv//sub eff/<0到/spl epsiv//sub eff/>0实现频率跟踪，因此预测更宽的带宽，但是所测量的环行器的带宽受到V波段波导的截止频率的限制。实验证据还表明，一个圆盘或三角形的半导体悬浮在一个E-平面结没有鳍线电路提供流通。实验结果清楚地说明了宽带行为的半导体结环行器的操作超过40 GHz，这是很难实现与铁氧体为基础的环行器。
A V-band n-type indium antimonide (InSb) junction circulator supported in a three-port finline structure has been fabricated and measured. Broad-band operation for a semiconductor junction circulator over the frequency range 50-75 GHz at a temperature of 77 K has been demonstrated for the first time. With an applied magnetic flux density of 0.88 T, approximately 10 dB of differential isolation has been measured over the entire waveguide frequency band. The measured results also indicate that circulation is possible when the semiconductor material has /spl epsiv//sub eff/<0. In principle, broader bandwidths are predicted since frequency tracking can be achieved from /spl epsiv//sub eff/<0 to /spl epsiv//sub eff/>0, but the bandwidths of the circulators measured are restricted by the cutoff frequency of the V-band waveguide. Experimental evidence also showed that a disc or triangular-shaped semiconductor suspended in an E-plane junction without the finline circuit provides circulation. The experimental results clearly illustrate the broad-band behavior of semiconductor junction circulators for operation beyond 40 GHz, which is difficult to achieve with ferrite-based circulators.