Reproducibility and stability of N–Al codoped p-type ZnO thin films
Reproducibility and stability of N–Al codoped p-type ZnO thin films
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DOI：
10.1007/s10853-005-2279-y
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发表时间：
2006-01
影响因子：
4.5
通讯作者：
J. Lu;L. Zhu;Z. Ye;F. Zhuge;B. Zhao;D. Ma;L. Wang;J. Y. Huang
中科院分区：
文献类型：
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作者：
J. Lu;L. Zhu;Z. Ye;F. Zhuge;B. Zhao;D. Ma;L. Wang;J. Y. Huang
通过 N-Al 共掺杂方法制备了可重复且稳定的 p 型 ZnO 薄膜。二次离子质谱测量表明 N 和 Al 并入 ZnO 中。 N-Al共掺杂p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率通常分别为50–100Ωcm、1×1017–8×1017cm−3和0.1–0.6cm2/Vs。通过霍尔测量、X射线衍射和光学透射来研究性能随储存时间的变化。结果表明，N-Al共掺杂ZnO薄膜的p型特性具有良好的重现性和稳定性。此外，N-Al共掺杂p型ZnO薄膜具有良好的结晶度和光学质量。这些属性与时间无关。
Reproducible and stablep-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 Ωcm, 1×1017–8×1017cm−3, and 0.1–0.6 cm2/Vs, respectively, for the N–Al codopedp-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that thep-type characteristics of the N–Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N–Al codopedp-type ZnO films have good crystallinity and optical quality. The properties are time independent.