Effect of residence time on microwave plasma chemical vapor deposition of diamond
Effect of residence time on microwave plasma chemical vapor deposition of diamond
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DOI：
10.1063/1.350179
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发表时间：
1991-11
影响因子：
3.2
通讯作者：
F. Celii;D. White;A. Purdes
中科院分区：
文献类型：
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作者：
F. Celii;D. White;A. Purdes
研究了反应物停留时间对微波辅助化学气相沉积金刚石膜性能的影响。在恒定气体压力为40Torr，气体成分为1%CH4的氢气中，总气体流量从25~800sccm调整，相当于我们的反应器的表观停留时间S为3-100sccm。在微波等离子沉积系统中，流量是少数几个与所有其他参数解耦的参数之一，这使得这是一个关于单个工艺变量影响的相对清晰的研究。在这项工作中制备了两种不同类型的金刚石薄膜。其中一组被直接沉积在金刚石籽晶硅片上。第二组是单独制备的，在其他相同的金刚石薄膜生长条件下，但沉积在一层微晶金刚石(MCD)上。用扫描电子显微镜、拉曼散射和光电子能谱对生长5h的∼2μm厚的连续多晶金刚石薄膜进行了分析。
We have investigated the effects of reactant residence time on the properties of microwave‐assisted chemical vapor deposited diamond films. Using a constant gas pressure of 40 Torr and gas composition of 1% CH4 in H2, the total gas flow rate was adjusted from 25 to 800 sccm which corresponds to apparent chamber residence times of 3–100 s for our reactor. The flow rate is one of the few parameters in the microwave plasma deposition system that is decoupled from all others, making this a relatively clean study on the effects of a single process variable. Two distinct types of diamond films were prepared in this work. One set was deposited directly on diamond‐seeded silicon wafers. A second set was prepared separately, and under otherwise identical diamond film growth conditions, but deposited on a layer of microcrystalline diamond (MCD). The 5‐h growths resulted in continuous polycrystalline diamond films of ∼2 μm thickness which were analyzed with scanning electron microscopy, Raman scattering and photolum...