Zirconia thin films by atomic layer epitaxy. A comparative study on the use of novel precursors with ozone
Zirconia thin films by atomic layer epitaxy. A comparative study on the use of novel precursors with ozone
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原子层外延法制备氧化锆薄膜。
DOI：
10.1039/b105272c
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
L. Niinistö
中科院分区：
文献类型：
--
作者：
M. Putkonen;L. Niinistö
以Zr(thd)4、Cp2Zr(CH3)2和Cp2ZrCl2为原料，采用原子层外延法制备了氧化锆薄膜
Zirconium oxide thin films have been deposited by atomic layer epitaxy (ALE) using Zr(thd)4, Cp2Zr(CH3)2 and Cp2ZrCl2
(thd = 3,3,5,5-tetramethylheptane-3,5-dionate, Cp = cyclopentadienyl) as zirconium precursors and ozone as the oxygen source. A plateau of constant growth rate (ALE window) was observed for the Zr(thd)4/O3 process at 375–400 °C, for Cp2Zr(CH3)2/O3 at 310–365 °C and for Cp2ZrCl2/O3 at 275–350 °C. Within these temperature ranges constant deposition rates of 0.24, 0.55 and 0.53 A (cycle)−1 were obtained, respectively. Deposited films were characterised by XRD and AFM for crystallinity
and surface morphology, while TOF-ERDA was used to analyse the ZrO2 film stoichiometry and possible impurities. Films deposited by optimised parameters from Cp2Zr(CH3)2/O3 and Cp2ZrCl2/O3 were crystalline showing the preferred (−111) orientation of monoclinic ZrO2. In all films, the orthorhombic zirconia phase was also present, although at higher temperatures its relative amount decreased. Zr(thd)4/O3 process produced films with lowest crystallinity consisting of both orthorhombic and monoclinic phases. According to TOF-ERDA, films were nearly stoichiometric with less than 0.5 atom% hydrogen and carbon. Outside the ALE window, a small chlorine contamination (0.1–0.3 wt%) was observed by XRF when the ZrO2 films were deposited from Cp2ZrCl2/O3 at
200–275 °C.