p-i-n CdTe 128-pixel detector for gamma-ray imaging fabricated by excimer laser processing
p-i-n CdTe 128-pixel detector for gamma-ray imaging fabricated by excimer laser processing
复制标题
通过准分子激光加工制造的用于伽马射线成像的 p-i-n CdTe 128 像素探测器
DOI：
10.1117/12.455777
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Y. Hatanaka
中科院分区：
文献类型：
--
作者：
T. Aoki;A. Nakamura;M. Niraula;Y. Tomita;Y. Hatanaka
利用二极管型碲化镉探测器，研制了一种室温下高能量分辨率的128像素伽玛射线成像探测器单元。采用准分子激光在高电阻率类p单晶CdTe晶片的一侧掺杂铟的n型CdTe薄层，在晶片的另一侧蒸发作为Shottkey电极的金电极，制备了二极管结构。该二极管检波器具有良好的二极管I-V特性，漏电流小。该CdTe探测器采用2mm × 2mm像素化，将128个32 × 4芯片以3mm的间隔、1mm的间隙安装在陶瓷印刷电路板上。印刷电路板直接连接MCSA-EX1 ASIC芯片和128ch辐射频谱分析仪系统。当使用Am-241和Co-57作为放射性同位素时，在室温下进行辐射时，所有像素的光谱响应在Co-57的122 keV峰值处的FWHM范围内为4.4 keV。来自像素的峰值强度也是均匀的。
A 128-pixel gamma-ray imaging detector unit, which has high-energy resolution with room temperature operation, was fabricated by using diode-type CdTe detector. The diode structure was prepared by indium-doped n-type CdTe thin layer formed by excimer laser doping on one-side of high resistivity p-like single crystal CdTe wafer, and gold electrode as a Shottkey electrode evaporated on opposite side of the wafer. This diode-detectors showed good diode I-V characteristics with low leakage current. This CdTe detectors were pixelized in the 2mm × 2mm, and the 128 chips (32 × 4 chips) were mounted on the ceramic printed circuit boards at 3mm interval with 1mm gap. The printed circuit boards are directly connected with the MCSA-EX1 ASIC chip and 128 ch radiation spectrum analyzer systems. When using the Am-241 and the Co-57 as radioisotopes, the spectral response from all pixels had within 4.4 keV of FWHM at 122 keV peak of Co-57 for radiation performed at room temperature. The intensities of the peak from pixels were also uniform.