Polarization-engineered GaN/InGaN/GaN tunnel diodes
Polarization-engineered GaN/InGaN/GaN tunnel diodes
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DOI：
10.1063/1.3517481
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发表时间：
2010-11-15
影响因子：
4
通讯作者：
Rajan, Siddharth
中科院分区：
文献类型：
--
作者：
Krishnamoorthy, Sriram;Nath, Digbijoy N.;Rajan, Siddharth
我们报告的设计和演示的极化工程GaN/InGaN/GaN隧道结二极管具有高电流密度和低隧道导通电压。Wentzel-Kramers-Brillouin计算被用于建模和设计具有窄带隙InGaN基势垒层的隧道结。采用分子束外延技术生长了N极性p-GaN/In（0.33）Ga（0.67）N/n-GaN异质结隧道二极管。在接近零偏压下实现了有效的带间隧穿，在1V的反向偏压下具有118A/cm（2）的高电流密度，达到最大电流密度高达9.2kA/cm（2）。这些结果代表了III族氮化物隧道结中报道的最高电流密度，并证明了III族氮化物隧道器件在广泛的光电和电子应用中的潜力。(C)2010年美国物理学会。[doi 10.1063/1.3517481]
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In(0.33)Ga(0.67)N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm(2) at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm(2). These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517481]