Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor
Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor
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Pt/HfOx/ITO 忆阻器中可控且稳定的量化电导状态
DOI：
10.1002/aelm.201901055
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发表时间：
2019
影响因子：
6.2
通讯作者：
Run-Wei Li
中科院分区：
文献类型：
--
作者：
Wuhong Xue;Yi Li;Gang Liu;Zhuorui Wang;Wen Xiao;Kemin Jiang;Zhicheng Zhong;Shuang Gao;Jun Ding;Xiangshui Miao;Xiao-Hong Xu;Run-Wei Li
原子构型的量子级操纵为构建具有不寻常固态物理和电子性质的奇异纳米结构提供了一个极好的平台。一个特定的例子是忆阻器，其中原子点接触经由局部离子过程的精细演化和随后的逐步器件电导量化使得能够自下而上设计存储器中计算，从而大大增加数据存储密度和更有效的多值逻辑算法。通过综合考虑忆阻器中纳米离子学的热力学和动力学，深入理解了原子重构的物理机制，并在此基础上建立了构建具有所需量子化电导的原子点接触结构的通用协议。通过Pt/HfOx/ITO结构重置过程中能量驱动的单原子能级氧操纵，首次展示了多达32个连续量子化电导态，间隔为半电导量子，可持续超过7000 s并调谐500次，不仅允许物理实现三值存储器逻辑功能，而且还为构建下一代量子电子器件提供了通用方法。
Quantum‐level manipulation of atomic configuration offers a excellent platform for the construction of exotic nanostructures that exhibit unusual solid‐state physics and electronic properties. One particular example is the memristor, in which the elaborate evolution of atomic point contact via local ionic processes and consequent stepwise device conductance quantization enable bottom‐up design of in‐memory computing with greatly increased data storage density and more efficient multi‐value logic algorithm. In‐depth understanding on the physics of atomic reconfiguration is achieved through comprehensive consideration of the thermodynamics and kinetics of nanoionics in memristors, based on which a general protocol of constructing atomic point contact structure with desired quantized conductance is established. Through energy‐driven single‐atom level oxygen manipulation in the reset process of a Pt/HfOx/ITO structure, up to 32 consecutive quantized conductance states with an interval of half conductance quantum that can be sustained for over 7000 s and tuned 500 times are demonstrated for the first time, not only allowing the physical implementation of ternary logic‐in‐memory functions, but also providing a universal methodology for building next‐generation quantum electronic devices.