Numerical investigation on the current mirror effect in a single-electron turnstile capacitively coupled to a one-dimensional array of small junctions
Numerical investigation on the current mirror effect in a single-electron turnstile capacitively coupled to a one-dimensional array of small junctions
复制标题
与一维小结阵列电容耦合的单电子十字转门电流镜效应的数值研究
DOI：
10.1063/1.1606113
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
Y. Mizugaki
中科院分区：
文献类型：
--
作者：
Y. Mizugaki
我们给出了对与一维（1D）小隧道结阵列电容耦合的单电子旋转栅中的电流镜像效应的数值结果。我们处理一个20结1D阵列和4结旋转门，通过耦合电容器在它们的中心电极上耦合。引入耦合参数Qc和电流镜像指数来定义耦合强度和评估电流镜像效果的质量。数值结果表明，一维阵列和旋转栅中心电极的有限栅极电荷e/2增强了电流镜像效应，其中−e为电子的电荷。为了研究增强的电流镜像效应，模拟了有限栅极电荷为e/2时一维阵列中的电荷传播。研究发现，在一维阵列中，暂困在中心电极的电子对增强电流镜像效应起着重要的作用。
We present numerical results of an examination of the current mirror effect in a single-electron turnstile capacitively coupled to a one-dimensional (1D) array of small tunnel junctions. We deal with a 20-junction 1D array and 4-junction turnstile coupled at their center electrodes via a coupling capacitor. A coupling parameter, Qc, and a current mirror index are introduced to define the strength of coupling and to evaluate the quality of the current mirror effect, respectively. Numerical results show that a finite gate charge of e/2 to the center electrodes of both the 1D array and the turnstile enhances the current mirror effect, where −e is the charge of an electron. To investigate the enhanced current mirror effect, charge propagation in the 1D array under a finite gate charge of e/2 is simulated. It is found that electrons temporarily trapped at the center electrode in the 1D array play an important role in the enhancement of the current mirror effect.
使用相位量子逻辑电路的 SFQ 移位寄存器存储器的高密度集成
DOI：
--
发表时间：
2008
期刊：
影响因子：
--
作者：
Y. Natsume;M. Igarashi;K. Churei;N. Yoshikawa
通讯作者：
N. Yoshikawa